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Ordering number : ENN6303
CMOS IC
LC35V256EM, ET-70W
256K (32K words x 8 bits) SRAM Control pins: OE and CE
Overview
The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Control inputs include OE for fast memory access and CE for power saving and device selection. This makes these devices optimal for systems that require low power or battery backup, and makes memory expansion easy. The ultralow standby current allows these devices to be used with capacitor backup as well.
Package Dimensions
unit: mm 3187A-SOP28D
[LC35V256EM-70W]
28 15
0.15
1
18.0
14
Features
* Supply voltage range: 3.0 to 3.6 V * Access time: 70 ns (maximum) * Standby current: 0.8 A (Ta 60C) 4.0 A (Ta 70C) * Operating temperature: -10 to +70C * Data retention voltage: 2.0 to 3.6 V * All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC) * Input/output shared function pins, 3-state output pins * No clock required (fully static circuits) * Package 28-pin SOP (450 mil) plastic package: LC35V256EM-70W 28-pin TSOP (8 x 13.4 mm) plastic package: LC35V256ET-70W
0.4 1.27
0.1 2.3
SANYO: SOP28D
unit: mm 3221-TSOP28 (Type I)
[LC35V256ET-70W]
21 8
11.8
1.27max
22
28 1 0.55 8.1
7 0.2
0.125
0.08
SANYO: TSOP28 (Type I)
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12800RM (OT) No. 6303-1/6
0.5
13.4
1.0
11.8
9.8 8.4
LC35V256EM, ET70W Pin Assignment (Top view)
SOP28 A14 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 I/O1 11 I/O2 12 I/O3 13 GND 14 28 VCC 27 WE 26 A13 25 A8 24 A9 23 A11 22 OE 21 A10 20 CE 19 I/O8 18 I/O7 17 I/O6 16 I/O5 15 I/O4
OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7
TSOP28
21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O8 I/O7 I/O6 I/O5 I/O4 GND I/O3 I/O2 I/O1 A0 A1 A2
LC35V256ET-70W
LC35V256EM-70W
Block Diagram
A6 A7 Address buffer Row decoder A8 A9 A10 A11 A12 A13 A14 Memory cell array 512 x 512 VCC GND
Input data buffer
I/O8
Input data control circuit
I/O1
Column I/O circuit Column decoder
Output data buffer
Address buffer A0 A1 A2 A3 A4 A5 CE
WE
OE
No. 6303-2/6
LC35V256EM, ET70W Pin Functions
A0 to A14 WE OE CE I/O1 to I/O8 VCC, GND Address input Read/write control input Output enable input Chip enable input Data I/O Power supply, ground
Function Table
Mode Read cycle Write cycle Output disable Unselected Note: X indicates H or L. CE L L L H OE L X H X WE H L H X I/O Data output Data input High impedance High impedance Supply current ICCA ICCA ICCA ICCS
Specifications
Absolute Maximum Ratings
Parameter Maximum supply voltage Input pin voltage I/O pin voltage Operating temperature Storage temperature Symbol VCC max VIN VI/O Topr Tstg Conditions Ratings 4.6 -0.3* to VCC + 0.3 -0.3 to VCC + 0.3 -10 to +70 -55 to +125 Unit V V V C C
Note: * The minimum value is -2.0 V for pulse widths under 30 ns.
I/O Capacitances at Ta = 25C, f = 1 MHz
Parameter I/O pin capacitance Input pin capacitance Symbol CI/O CI VI/O = 0 V VIN = 0 V Conditions Ratings min typ 6 6 max 10 10 Unit pF pF
Note: All units are not tested; only samples are tested.
DC Allowable Operating Ranges at Ta = -10 to +70C, VCC = 3.0 to 3.6 V
Parameter Supply voltage Input voltage Symbol VCC VIH VIL Conditions Ratings min 3.0 0.8VCC -0.3* typ 3.3 max 3.6 VCC + 0.3 0.2VCC Unit V V V
Note: * The minimum value is -2.0 V for pulse widths under 30 ns.
No. 6303-3/6
LC35V256EM, ET70W DC Electrical Characteristics at Ta = -10 to +70C, VCC = 3.0 to 3.6 V
Parameter Input leakage current Output leakage current Output high-level voltage Symbol ILI ILO VOH1 VOH2 VOL1 VOL2 ICCA2 Operating current drain CMOS inputs ICCA3 VIN = 0 to VCC VCE = VIH or VOE = VIH or VWE = VIL VI/O = 0 to VCC IOH1 = -2.0 mA IOH2 = -100 A IOL1 = 2.0 mA IOL2 = 100 A VCE = VIL, II/O = 0 mA, VIN = VIH or VIL VCE = VIL, VIN = VIH or VIL II/O = 0 mA, DUTY 100 % VCE VCC - 0.2 V, VIN = 0 to VCC VCE = VIH, VIN = 0 to VCC min cycle 1 s cycle Ta 25C Ta 60C Ta 70C 20 1.5 0.01 0.8 4.0 0.4 Conditions Ratings min -1.0 -1.0 VCC - 0.4 VCC - 0.1 0.4 0.4 1.2 25 2.5 typ max +1.0 +1.0 Unit A A V V V V mA mA mA A A A mA
Output low-level voltage
Standby mode current drain
VCC - 0.2 V/ 0.2 V inputs CMOS inputs
ICCS1 ICCS2
Note: * Reference values when VCC = 3.3 V and Ta = 25C.
AC Electrical Characteristics at Ta = -10 to +70C, VCC = 3.0 to 3.6 V AC test conditions Input pulse voltage levels: 0.2 VCC to 0.8 VCC Input rise and fall times: 5 ns Input and output timing levels: 1/2 VCC Output load: 30 pF (including the jig capacitance) Read Cycle
Parameter Read cycle time Address access time CE access time OE access time Output hold time CE output enable time OE output enable time CE output disable time OE output disable time Symbol tRC tAA tCA tOA tOH tCOE tOOE tCOD tOOD 10 10 5 35 30 min 70 70 70 50 max Unit ns ns ns ns ns ns ns ns ns
Write Cycle
Parameter Write cycle time Address setup time Write pulse width CE setup time Write recovery time CE write recovery time Data setup time Data hold time CE data hold time WE output enable time WE output disable time Symbol tWC tAS tWP tCW tWR tWR1 tDS tDH tDH1 tWOE tWOD min 70 0 55 60 0 0 50 0 0 5 35 max Unit ns ns ns ns ns ns ns ns ns ns ns
No. 6303-4/6
LC35V256EM, ET70W Timing Charts [Read cycle] *1
tRC
A0 to A14 tAA tCA CE tCOE tOA OE tOOE *5 DOUT1 to 8 tOOD tCOD tOH
Output data valid
[Write cycle 1] (WE write) *6
tWC
A0 to A14 tCW *4 CE tAS tWP *3 tWR
WE tWOD *5 DOUT1to 8 tDS DIN1 to 8 *2 Data in stable tDH *2 tWOE
*7
[Write cycle 2] (CE write) *6
tWC
A0 to A14 tAS CE tWR1 tCW *4
tWP *3 WE
*5 DOUT1to 8
High impedance
tDS DIN1 to 8
tDH1
Data in stable
No. 6303-5/6
LC35V256EM, ET-70W
Notes:1. WE must be held at the high level during the read cycle. 2. Do not apply reverse phase signals to the DOUT pins when those pins are in the output state. 3. The time tWP is the period when both CE and WE are low. It is defined as the time from the fall of WE to the rise of CE or WE, whichever occurs first. 4. The time tCW is the period when both CE and WE are low. It is defined as the time from the fall of CE to the rise of CE or WE, whichever occurs first. 5. The DOUT pins will be in the high-impedance state if any one of the following is held: OE is at the high level, CE is at the high level, or WE is at the low level. 6. The OE pin must be either held high or held low during the write cycle. 7. DOUT has the same phase as the write data during this write cycle.
Data Retention Characteristics at Ta = -10 to +70C
Parameter Data retention supply voltage Chip enable setup time Chip enable hold time Note: * tRC: Read cycle time Symbol VDR tCDR tR VCE VCC - 0.2 V Conditions min 2.0 0 tRC* max 3.6 Unit V ns ns
Data Retention Waveforms (CE control)
tCDR VCC 3.0 V VIH VDR VCE GND VCE VCC - 0.2 V Data retention mode tR
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No. 6303-6/6

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